PART |
Description |
Maker |
DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-7 |
POWER TRANSFORMER, 24 VA POWER TRANSFORMER, 10 VA POWER TRANSFORMER, 4.4 VA POWER TRANSFORMER, 1.2 VA POWER TRANSFORMER, 1 VA Low Frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
|
Pulse Electronics, Corp. PULSE ELECTRONICS CORP Pulse A Technitrol Company Pulse A Technitrol Comp...
|
45912-0030 0459120030 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Signal, Power, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|